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D041 High Resolution X-ray Diffraction Studies of Epitaxially Grown GaN/SiC(0001) - Growth Conditions, Defect Density and Stress
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- Journal:
- Powder Diffraction / Volume 18 / Issue 2 / June 2003
- Published online by Cambridge University Press:
- 20 May 2016, p. 173
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Crystalline Perfection of Epitaxial Structure: Correlations with Composition, Thickness, and Elastic Strain of Epitaxial Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1167 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1167-O07-04
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- 2009
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High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 467-473
- Print publication:
- 2000
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High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W8.3
- Print publication:
- 1999
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Reciprocal Space X-Ray Mapping and Transmission Electron Microscopic Studies of Coincided δ-Inas and As-Cluster Superlattices in Gaas Films Grown by Molecular-Beam Epitaxy at Low Temperature
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- Journal:
- MRS Online Proceedings Library Archive / Volume 583 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 143
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- 1999
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Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 442 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 491
- Print publication:
- 1996
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Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 417 / 1995
- Published online by Cambridge University Press:
- 10 February 2011, 135
- Print publication:
- 1995
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